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importantSYS.SOURCE: arXiv2026-07-31T20:44:29Z

Understanding DRAM Read Disturbance: RowHammer and RowPress Mechanisms

This paper addresses the gap between experimental observations and device-level models of DRAM read disturbance phenomena, specifically RowHammer and RowPress, through TCAD simulations that align with empirical bitflip characteristics. It identifies key parameters affecting simulation accuracy and provides insights for improving DRAM reliability and mitigation strategies.

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